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HFA3101BZ

Name: Bipolar Transistor Array, Six NPN, 8 V, 30 mA
Brand: RENESAS
SKU: 1561946
Availability: OutOfStock

Bipolar Transistor Array, Six NPN, 8 V, 30 mA

Image is for illustrative purposes only. Please refer to product description.

ManufacturerRENESAS

Manufacturer Part NoHFA3101BZ

Order Code1561946

Technical Datasheet

Data Sheet

See all Technical Docs

Available to Order

Manufacturer Standard Lead Time: 14 week(s)

Quantity	Price (ex VAT)
980+	kr 53.180

Price for:Each

Minimum: 980

Multiple: 980

kr 52,116.40 (ex VAT)

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Product Information

ManufacturerRENESAS

Manufacturer Part NoHFA3101BZ

Order Code1561946

Technical Datasheet

Data Sheet

Transistor PolaritySix NPN

Collector Emitter Voltage Max NPN8V

Collector Emitter Voltage Max PNP-

Continuous Collector Current NPN30mA

Continuous Collector Current PNP-

Power Dissipation NPN-

Power Dissipation PNP-

DC Current Gain hFE Min NPN70hFE

DC Current Gain hFE Min PNP-

Transistor Case StyleSOIC

No. of Pins8Pins

Transistor MountingSurface Mount

Operating Temperature Max85°C

Transition Frequency NPN10GHz

Transition Frequency PNP-

Product Range-

Qualification-

MSLMSL 1 - Unlimited

SVHCNo SVHC (21-Jan-2025)

Product Overview

The HFA3101BZ is a NPN Gilbert cell UHF Bipolar Transistor Array configured as a multiplier cell. It achieves very high fT (10GHz) while maintaining excellent hFE and VBE matching characteristics that have been maximized through careful attention to circuit design and layout, making this product ideal for communication circuits. It is suitable for use in mixer applications and the cell provides high gain and good cancellation of 2nd order distortion terms.

3.5dB Low noise figure (transistor)
<lt/>0.01nA Low collector leakage current
Excellent hFE and VBE matching
Pin to pin compatible to UPA101
-40 to 85°C Temperature range

Applications

RF Communications, Automation & Process Control, Wireless, Audio, Sensing & Instrumentation, Industrial, Power Management

Notes

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.

Technical Specifications

Transistor Polarity

Six NPN

Collector Emitter Voltage Max PNP

Continuous Collector Current PNP

Power Dissipation PNP

DC Current Gain hFE Min PNP

No. of Pins

8Pins

Operating Temperature Max

85°C

Transition Frequency PNP

Qualification

SVHC

No SVHC (21-Jan-2025)

Collector Emitter Voltage Max NPN

Continuous Collector Current NPN

30mA

Power Dissipation NPN

DC Current Gain hFE Min NPN

70hFE

Transistor Case Style

SOIC

Transistor Mounting

Surface Mount

Transition Frequency NPN

10GHz

Product Range

MSL

MSL 1 - Unlimited

Technical Docs (3)

Product Change Notice EN

Technical Data Sheet EN

EOL Notices EN

Legislation and Environmental

Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out

Tariff No:85423990

US ECCN:EAR99

EU ECCN:NLR

RoHS Compliant:Yes

RoHS

RoHS Phthalates Compliant:Yes

RoHS

SVHC:No SVHC (21-Jan-2025)

Download Product Compliance Certificate

Product Compliance Certificate

Weight (kg):.000178

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