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BSC082N10LSGATMA1
Power MOSFET, N Channel, 100 V, 100 A, 0.0082 ohm, TDSON, Surface Mount
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ManufacturerINFINEON
Manufacturer Part NoBSC082N10LSGATMA1
Order Code4318955
Product RangeOptiMOS 2 Series
Technical Datasheet
Product Information
ManufacturerINFINEON
Manufacturer Part NoBSC082N10LSGATMA1
Order Code4318955
Product RangeOptiMOS 2 Series
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id100A
Drain Source On State Resistance0.0082ohm
Transistor Case StyleTDSON
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.4V
Power Dissipation156W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeOptiMOS 2 Series
Qualification-
SVHCNo SVHC (21-Jan-2025)
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2 Products Found
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
100A
Transistor Case Style
TDSON
Rds(on) Test Voltage
10V
Power Dissipation
156W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.0082ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.4V
No. of Pins
8Pins
Product Range
OptiMOS 2 Series
SVHC
No SVHC (21-Jan-2025)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0005