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DMG3406L-7
Power MOSFET, N Channel, 30 V, 3.6 A, 0.05 ohm, SOT-23, Surface Mount
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ManufacturerDIODES INC.
Manufacturer Part NoDMG3406L-7
Order Code3577034RL
Product RangeDMG3406L
Technical Datasheet
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| 100+ | kr 0.824 |
| 500+ | kr 0.764 |
| 1500+ | kr 0.667 |
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Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMG3406L-7
Order Code3577034RL
Product RangeDMG3406L
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id3.6A
Drain Source On State Resistance0.05ohm
On Resistance Rds(on)0.025ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation Pd770mW
Power Dissipation770mW
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeDMG3406L
Qualification-
Automotive Qualification Standard-
MSL-
SVHCNo SVHC (27-Jun-2024)
Product Overview
DMG3406L-7 is a N-channel enhancement mode MOSFET. This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Typical applications include battery charging, power management functions, DC-DC converters, and portable power adapters.
- Low on-resistance, low input capacitance
- Fast switching speed, low input/output leakage
- Drain-source voltage is 30V at TA=+25°C
- Gate-source voltage is ±20V at TA=+25°C
- Continuous drain current is 3.6A at TA=+25°C, steady state, VGS=10V
- Pulsed drain current (pulse width ≤ 10µS, duty cycle ≤ 1%) is 30A at TA=+25°C
- Maximum body diode forward current is 1.4A at TA=+25°C
- Power dissipation is 0.77W
- SOT23 case
- Operating and storage temperature range from -55 to +150°C
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.05ohm
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Power Dissipation Pd
770mW
No. of Pins
3Pins
Product Range
DMG3406L
Automotive Qualification Standard
-
SVHC
No SVHC (27-Jun-2024)
Transistor Polarity
N Channel
Continuous Drain Current Id
3.6A
On Resistance Rds(on)
0.025ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
Power Dissipation
770mW
Operating Temperature Max
150°C
Qualification
-
MSL
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.004536
Product traceability