Reduced PricesOffersContact UsHelpTrack Orderspå dansk
Register
0
0 Itemskr0.00
ex VAT
ex VAT

IGBT Modules:

6 Products Found
View
Buyer
Engineer
Manufacturer
IGBT Configuration
Transistor Polarity
Continuous Collector Current
DC Collector Current
Collector Emitter Saturation Voltage
Collector Emitter Saturation Voltage Vce(on)
Power Dissipation Pd
Power Dissipation
Junction Temperature Tj Max
Operating Temperature Max
Transistor Case Style
Collector Emitter Voltage V(br)ceo
IGBT Termination
Collector Emitter Voltage Max
IGBT Technology
Transistor Mounting
Product Range
Packaging
Filter(s) Applied
1 Filter(s) Selected
ComparePrice ForQuantity
FP15R12KT3BPSA1
INFINEON FP15R12KT3BPSA1
3889196

Data Sheet

RoHS

Date/Lot Code

INFINEON
  1. IGBT Module
  2. PIM Three Phase Input Rectifier
  3. 25 A
  4. 1.7 V
  5. 105 W
  6. 125 °C
  7. Module
Each
1+
kr 329.360
5+
kr 322.780
10+
kr 316.200
Min: 1 / Mult: 1
PIM Three Phase Input Rectifier
-
25A
25A
1.7V
1.7V
105W
105W
125°C
125°C
Module
1.2kV
Press Fit
1.2kV
IGBT4 - T4
Panel
EasyPIM 1B Series
FP10R12W1T4B11BOMA1
INFINEON FP10R12W1T4B11BOMA1
3227671

Data Sheet

RoHS

Date/Lot Code

INFINEON
  1. IGBT Module
  2. PIM Three Phase Input Rectifier
  3. 10 A
  4. 1.85 V
  5. 105 W
  6. 175 °C
  7. Module
Each
1+
kr 264.890
5+
kr 222.340
10+
kr 179.710
50+
kr 176.120
100+
kr 172.530
Min: 1 / Mult: 1
PIM Three Phase Input Rectifier
-
10A
10A
1.85V
1.85V
105W
105W
175°C
175°C
Module
1.2kV
Press Fit
1.2kV
IGBT 4 [Trench/Field Stop]
Panel
-
FP10R12W1T4BOMA1
INFINEON FP10R12W1T4BOMA1
2726156

Data Sheet

RoHS

Date/Lot Code

INFINEON
  1. IGBT Module
  2. PIM Three Phase Input Rectifier
  3. 20 A
  4. 1.85 V
  5. 105 W
  6. 150 °C
  7. Module
Each
1+
kr 260.850
5+
kr 218.820
10+
kr 176.720
50+
kr 173.210
100+
kr 169.620
Min: 1 / Mult: 1
PIM Three Phase Input Rectifier
N Channel
20A
20A
1.85V
1.85V
105W
105W
150°C
150°C
Module
1.2kV
Press Fit
1.2kV
IGBT 4 [Trench/Field Stop]
Panel
EasyPIM 1B
FP10R12W1T4B3BOMA1
INFINEON FP10R12W1T4B3BOMA1
3889276

Data Sheet

RoHS

Date/Lot Code

INFINEON
  1. IGBT Module
  2. PIM Three Phase Input Rectifier
  3. 20 A
  4. 1.85 V
  5. 105 W
  6. 150 °C
  7. Module
Each
1+
kr 254.580
5+
kr 213.350
10+
kr 172.110
50+
kr 172.040
100+
kr 168.600
Min: 1 / Mult: 1
PIM Three Phase Input Rectifier
-
20A
20A
1.85V
1.85V
105W
105W
150°C
150°C
Module
1.2kV
Solder
1.2kV
IGBT 4 [Trench/Field Stop]
Panel
EasyPIM Series
FP15R12KE3GBPSA1
INFINEON FP15R12KE3GBPSA1
3775906

Data Sheet

RoHS

Date/Lot Code

INFINEON
  1. IGBT Module
  2. PIM Three Phase Input Rectifier
  3. 25 A
  4. 1.7 V
  5. 105 W
  6. 125 °C
  7. Module
Each
1+
kr 502.540
5+
kr 473.900
10+
kr 445.190
50+
kr 386.940
Min: 1 / Mult: 1
PIM Three Phase Input Rectifier
-
25A
25A
1.7V
1.7V
105W
105W
125°C
125°C
Module
1.2kV
Solder
1.2kV
IGBT 3 [Trench/Field Stop]
Panel
EconoPIM 2
FP15R12KT3BOSA1
INFINEON FP15R12KT3BOSA1
2726158

Data Sheet

RoHS

Date/Lot Code

INFINEON
  1. IGBT Module
  2. PIM Three Phase Input Rectifier
  3. 25 A
  4. 1.7 V
  5. 105 W
  6. 125 °C
  7. Module
Each
1+
kr 53.040
5+
kr 42.510
10+
kr 39.820
Min: 1 / Mult: 1
PIM Three Phase Input Rectifier
N Channel
25A
25A
1.7V
1.7V
105W
105W
125°C
125°C
Module
1.2kV
Press Fit
1.2kV
IGBT 3 [Trench/Field Stop]
Panel
EconoPIM 2
1-6 of 6 items
of 1 page(s)

Popular Suppliers

ONSEMI
NEXPERIA
VISHAY
STMICROELECTRONICS
MULTICOMP PRO
INFINEON
NXP
ROHM

New Semiconductors - Discretes

TP65H035G4YS - gallium nitride (GaN) FET
RENESAS
TP65H035G4YS - gallium nitride (GaN) FET
RENESAS
G3R60MT07K – Silicon Carbide MOSFET
GENESIC SEMICONDUCTOR
G3R60MT07K – Silicon Carbide MOSFET
GENESIC SEMICONDUCTOR
TK024N60Z1,S1F(S - Power MOSFET
TOSHIBA
TK024N60Z1,S1F(S - Power MOSFET
TOSHIBA
M3S SiC Series
ONSEMI
M3S SiC Series
ONSEMI
CoolSiC™ Trench MOSFET
INFINEON
CoolSiC™ Trench MOSFET
INFINEON
EconoDUAL™ 3 product family for medium power applications
INFINEON
EconoDUAL™ 3 product family for medium power applications
INFINEON
TK024N60Z1,S1F(S - Power MOSFET
TOSHIBA
TK024N60Z1,S1F(S - Power MOSFET
TOSHIBA
Nexperia E-Mode Power Gallium Nitride FET's (GaN FET's) for high & low voltage applications.
NEXPERIA
Nexperia E-Mode Power Gallium Nitride FET's (GaN FET's) for high & low voltage applications.
NEXPERIA
New onsemi 650v SiC MOSFETs
ONSEMI
New onsemi 650v SiC MOSFETs
ONSEMI
semi-disc-np1-nov-analog-devices-matched-bjt-arrays
ANALOG DEVICES
semi-disc-np1-nov-analog-devices-matched-bjt-arrays
ANALOG DEVICES
New Toshiba SiC Schottky Barrier Diodes
TOSHIBA
New Toshiba SiC Schottky Barrier Diodes
TOSHIBA
XPT series IGBT Thin-wafer Technology for snubber-less hard-switching applications
LITTELFUSE
XPT series IGBT Thin-wafer Technology for snubber-less hard-switching applications
LITTELFUSE
MPS Series SiC Schottky Diodes - 650V to 1.7KV
GENESIC SEMICONDUCTOR
MPS Series SiC Schottky Diodes - 650V to 1.7KV
GENESIC SEMICONDUCTOR
N-Channel Power MOSFET
INFINEON
N-Channel Power MOSFET
INFINEON
600 V, 30 A Trench field-stop IGBT with full-rated Silicon Diode
NEXPERIA
600 V, 30 A Trench field-stop IGBT with full-rated Silicon Diode
NEXPERIA
Norton Secured
BSI 9001
Trade Account