FDC6306P
Dual MOSFET, P Channel, 20 V, 1.9 A
Kontakt mig, når varen er på lager
| Antal | |
|---|---|
| 3000+ | kr 1,510 |
| 9000+ | kr 1,400 |
Produktoplysninger
Produktoversigt
The FDC6306P is a dual P-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize ON-state resistance and yet maintain low gate charge for superior switching performance. This device has been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive packages are impractical. It is suitable for use with load switch and battery protected applications.
- Low gate charge
- Fast switching speed
- High performance Trench technology for extremely low RDS (ON)
- Small footprint
- Low profile
Applikationer
Industrial, Power Management
Advarsler
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Tekniske specifikationer
P Channel
20V
1.9A
0.17ohm
6Pins
960mW
PowerTrench Series
MSL 1 - Unlimited
-
-
-
SuperSOT
-
150°C
-
No SVHC (27-Jun-2024)
Tekniske dokumenter (3)
Lovgivning og miljø
Det land, hvor den sidste væsentlige fremstillingsproces fandt stedOprindelsesland:Philippines
Det land, hvor den sidste væsentlige fremstillingsproces fandt sted
RoHS
RoHS
Certifikater om produktoverholdelse