FCD4N60TM
Power MOSFET, N Channel, 600 V, 3.9 A, 1.2 ohm, TO-252 (DPAK), Surface Mount
Brug for flere?
| Antal | |
|---|---|
| 1+ | kr 14,140 |
| 10+ | kr 9,600 |
| 100+ | kr 6,190 |
| 500+ | kr 5,310 |
| 1000+ | kr 5,100 |
| 5000+ | kr 4,840 |
Produktoplysninger
Produktoversigt
The FCD4N60TM is a N-channel SuperFET® high voltage super-junction MOSFET utilizes charge balance technology for outstanding low ON-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dV/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
- Ultra low gate charge (Qg = 12.8nC)
- Low effective output capacitance (Coss.eff = 32pF)
- 100% avalanche tested
Applikationer
Industrial, Power Management, Communications & Networking, Lighting, Alternative Energy
Advarsler
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Tekniske specifikationer
N Channel
3.9A
TO-252 (DPAK)
10V
50W
150°C
-
Lead (27-Jun-2024)
600V
1.2ohm
Surface Mount
5V
3Pins
-
MSL 1 - Unlimited
Tekniske dokumenter (2)
Lovgivning og miljø
Det land, hvor den sidste væsentlige fremstillingsproces fandt stedOprindelsesland:China
Det land, hvor den sidste væsentlige fremstillingsproces fandt sted
RoHS
RoHS
Certifikater om produktoverholdelse