2N7000TA
Power MOSFET, N Channel, 60 V, 200 mA, 5 ohm, TO-226AA, Through Hole
Brug for flere?
| Antal | |
|---|---|
| 5+ | kr 2,770 |
| 10+ | kr 2,060 |
| 100+ | kr 1,060 |
| 500+ | kr 1,020 |
| 1000+ | kr 0,860 |
| 5000+ | kr 0,568 |
Produktoplysninger
Produktoversigt
The 2N7000TA is a N-channel enhancement mode Field Effect Transistor is produced using high cell density and DMOS technology. It minimize on-state resistance while providing rugged, reliable and fast switching performance. They can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. These products are particularly suited for low-voltage, low-current applications, such as small servo motor control, power MOSFET gate drivers and other switching applications.
- Fast switching
- Lower input capacitance
- Extended safe operating area
- Improved inductive ruggedness
- Improved high temperature reliability
Applikationer
Power Management, Motor Drive & Control, Industrial
Advarsler
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Tekniske specifikationer
N Channel
200mA
TO-226AA
10V
400mW
150°C
-
No SVHC (27-Jun-2024)
60V
5ohm
Through Hole
3.9V
3Pins
-
-
Tekniske dokumenter (2)
Alternativer til 2N7000TA
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Lovgivning og miljø
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RoHS
RoHS
Certifikater om produktoverholdelse