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MRFE6VS25NR1
RF FET Transistor, 133 VDC, 1.8 MHz, 2000 MHz, TO-270
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Produktoplysninger
ProducentNXP
Producentens varenummerMRFE6VS25NR1
Varenummer2776252RL
Teknisk datablad
Drain Source Voltage Vds133VDC
Continuous Drain Current Id-
Power Dissipation-
Operating Frequency Min1.8MHz
Operating Frequency Max2000MHz
Transistor Case StyleTO-270
No. of Pins2Pins
Operating Temperature Max225°C
Channel TypeN Channel
Transistor MountingFlange
Product Range-
SVHCNo SVHC (27-Jun-2018)
Produktoversigt
The MRFE6VS25NR1 is a N-channel RF Power LDMOS Transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to 2000MHz. It is fabricated using enhanced ruggedness platform and is suitable for use in applications where high VSWRs are encountered.
- High ruggedness
- Enhancement-mode lateral MOSFET
- Wide operating frequency range
- Extreme ruggedness
- Unmatched, capable of very broadband operation
- Integrated stability enhancements
- Low thermal resistance
- Extended ESD protection circuit
Tekniske specifikationer
Drain Source Voltage Vds
133VDC
Power Dissipation
-
Operating Frequency Max
2000MHz
No. of Pins
2Pins
Channel Type
N Channel
Product Range
-
Continuous Drain Current Id
-
Operating Frequency Min
1.8MHz
Transistor Case Style
TO-270
Operating Temperature Max
225°C
Transistor Mounting
Flange
SVHC
No SVHC (27-Jun-2018)
Tekniske dokumenter (3)
Lovgivning og miljø
Oprindelsesland:
Det land, hvor den sidste væsentlige fremstillingsproces fandt stedOprindelsesland:Malaysia
Det land, hvor den sidste væsentlige fremstillingsproces fandt sted
Det land, hvor den sidste væsentlige fremstillingsproces fandt stedOprindelsesland:Malaysia
Det land, hvor den sidste væsentlige fremstillingsproces fandt sted
Tarifnr.:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS-kompatibel:Ja
RoHS
Kompatible med RoHS-phthalater:Ja
RoHS
SVHC:No SVHC (27-Jun-2018)
Download certifikat om produktoverholdelse
Certifikater om produktoverholdelse
Vægt (kg):.0003
Produktsporbarhed