IRLR120NTRPBF
Power MOSFET, N Channel, 100 V, 10 A, 0.185 ohm, TO-252AA, Surface Mount
2.000 Du kan reservere fra lager nu
| Antal | |
|---|---|
| 1+ | kr 5,860 |
| 10+ | kr 4,350 |
| 100+ | kr 3,440 |
| 500+ | kr 2,950 |
| 1000+ | kr 2,740 |
| 5000+ | kr 2,230 |
Produktoplysninger
Produktoversigt
The IRLR120NTRPBF is a HEXFET® fifth generation single N-channel Power MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient device for use in a wide variety of applications. It is designed for surface-mounting using vapour phase, infrared or wave soldering techniques. Power dissipation level up to 1.5W is possible in typical surface-mount applications.
- Advanced process technology
- Fast switching
- Fully avalanche rating
- Low static drain-to-source ON-resistance
- Dynamic dV/dt rating
- Logic level
Applikationer
Power Management
Advarsler
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Tekniske specifikationer
N Channel
10A
TO-252AA
10V
39W
175°C
-
No SVHC (21-Jan-2025)
100V
0.185ohm
Surface Mount
2V
3Pins
-
MSL 1 - Unlimited
Tekniske dokumenter (2)
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RoHS
RoHS
Certifikater om produktoverholdelse