IRFB4229PBF
Power MOSFET, N Channel, 250 V, 46 A, 0.046 ohm, TO-220AB, Through Hole
Brug for flere?
| Antal | |
|---|---|
| 1+ | kr 22,590 |
| 10+ | kr 21,690 |
| 100+ | kr 10,990 |
| 500+ | kr 8,970 |
| 1000+ | kr 8,900 |
Produktoplysninger
Produktoversigt
The IRFB4229PBF is a HEXFET® single N-channel Power MOSFET designed for sustain, energy recovery and pass switch applications in plasma display panels. It utilizes the latest processing techniques to achieve low ON-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
- Advanced process technology
- Low Qg for fast response
- High repetitive peak current capability for reliable operation
- Short fall and rise times for fast switching
- Repetitive avalanche capability for robustness and reliability
Applikationer
Audio, Consumer Electronics, Power Management
Advarsler
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Tekniske specifikationer
N Channel
46A
TO-220AB
10V
330W
175°C
-
No SVHC (21-Jan-2025)
250V
0.046ohm
Through Hole
5V
3Pins
-
-
Tekniske dokumenter (3)
Lovgivning og miljø
Det land, hvor den sidste væsentlige fremstillingsproces fandt stedOprindelsesland:China
Det land, hvor den sidste væsentlige fremstillingsproces fandt sted
RoHS
RoHS
Certifikater om produktoverholdelse