IRF7343TRPBF
Dual MOSFET, Complementary N and P Channel, 55 V, 55 V, 4.7 A, 4.7 A, 0.043 ohm
Brug for flere?
| Antal | |
|---|---|
| 1+ | kr 8,850 |
| 10+ | kr 6,020 |
| 100+ | kr 3,910 |
| 500+ | kr 2,980 |
| 1000+ | kr 2,810 |
| 5000+ | kr 2,430 |
Produktoplysninger
Produktoversigt
The IRF7343TRPBF is a dual N/P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space.
- Generation V technology
- Ultra low ON-resistance
- Surface-mount device
- Fully avalanche rated
Applikationer
Industrial, Power Management
Tekniske specifikationer
Complementary N and P Channel
55V
4.7A
0.043ohm
8Pins
2W
-
-
55V
4.7A
0.043ohm
SOIC
2W
150°C
-
No SVHC (21-Jan-2025)
Tekniske dokumenter (3)
Tilknyttede produkter
3 produkter blev fundet
Lovgivning og miljø
Det land, hvor den sidste væsentlige fremstillingsproces fandt stedOprindelsesland:Philippines
Det land, hvor den sidste væsentlige fremstillingsproces fandt sted
RoHS
RoHS
Certifikater om produktoverholdelse