IRF7342TRPBF
Dual MOSFET, P Channel, 55 V, 55 V, 3.4 A, 3.4 A, 0.095 ohm
4.000 Du kan reservere fra lager nu
| Antal | |
|---|---|
| 1+ | kr 11,310 |
| 10+ | kr 7,440 |
| 100+ | kr 4,950 |
| 500+ | kr 4,400 |
| 1000+ | kr 4,030 |
| 5000+ | kr 3,390 |
Produktoplysninger
Produktoversigt
The IRF7342TRPBF is a dual P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space.
- Generation V technology
- Ultra low ON-resistance
- Surface-mount device
- Dynamic dV/dt rating
- Fast switching performance
Applikationer
Industrial, Power Management
Tekniske specifikationer
P Channel
55V
3.4A
0.095ohm
8Pins
2W
-
-
55V
3.4A
0.095ohm
SOIC
2W
150°C
-
No SVHC (21-Jan-2025)
Tekniske dokumenter (4)
Tilknyttede produkter
1 produkt fundet
Lovgivning og miljø
Det land, hvor den sidste væsentlige fremstillingsproces fandt stedOprindelsesland:Philippines
Det land, hvor den sidste væsentlige fremstillingsproces fandt sted
RoHS
RoHS
Certifikater om produktoverholdelse