Brug for flere?
| Antal | |
|---|---|
| 1+ | kr 18,280 | 
| 10+ | kr 11,160 | 
| 50+ | kr 9,960 | 
| 100+ | kr 8,690 | 
| 250+ | kr 8,540 | 
Produktoplysninger
Produktoversigt
The IRF3205STRLPBF is a HEXFET® single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The surface-mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible ON-resistance in any existing surface-mount package. It is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.
- Advanced process technology
- Dynamic dV/dt rating
- Fully avalanche rating
Applikationer
Power Management
Tekniske specifikationer
N Channel
110A
TO-263 (D2PAK)
10V
200W
175°C
-
No SVHC (21-Jan-2025)
55V
8000µohm
Surface Mount
4V
3Pins
-
MSL 1 - Unlimited
Tekniske dokumenter (3)
Alternativer til IRF3205STRLPBF
1 produkt fundet
Lovgivning og miljø
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RoHS
RoHS
Certifikater om produktoverholdelse