IRF1407PBF
Power MOSFET, N Channel, 75 V, 130 A, 0.0078 ohm, TO-220AB, Through Hole
Brug for flere?
| Antal | |
|---|---|
| 1+ | kr 18,880 |
| 10+ | kr 16,640 |
| 100+ | kr 7,840 |
| 500+ | kr 6,790 |
| 1000+ | kr 6,630 |
Produktoplysninger
Produktoversigt
The IRF1407PBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this HEXFET® power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
- Advanced process technology
- Dynamic dV/dt rating
- Repetitive avalanche allowed up to Tjmax
Applikationer
Motor Drive & Control, Automotive, Power Management
Advarsler
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Tekniske specifikationer
N Channel
130A
TO-220AB
10V
330W
175°C
-
No SVHC (21-Jan-2025)
75V
0.0078ohm
Through Hole
4V
3Pins
-
-
Tekniske dokumenter (2)
Alternativer til IRF1407PBF
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Lovgivning og miljø
Det land, hvor den sidste væsentlige fremstillingsproces fandt stedOprindelsesland:South Korea
Det land, hvor den sidste væsentlige fremstillingsproces fandt sted
RoHS
RoHS
Certifikater om produktoverholdelse