IHW15N120R3FKSA1
IGBT, 30 A, 1.7 V, 254 W, 1.2 kV, TO-247, 3 Pins
240 Du kan reservere fra lager nu
| Antal | |
|---|---|
| 1+ | kr 25,600 |
| 10+ | kr 19,100 |
| 100+ | kr 13,360 |
| 500+ | kr 10,370 |
| 1000+ | kr 10,150 |
Produktoplysninger
Produktoversigt
The IHW15N120R3 is a 1200V Reverse Conducting IGBT with monolithic body diode. Powerful monolithic body diode with low forward voltage is designed for soft commutation only. TRENCHSTOP™ technology applications offers very tight parameter distribution and high ruggedness as well easy parallel switching capability due to positive temperature coefficient in VCE (sat). Discrete IGBT is ideal for hard switching applications as well as soft switching applications and other resonant applications.
- Excellent quality
- Lower EMI filtering requirements
- JESD-022 Qualified
- Lowest power dissipation
- Better thermal management
- Surge current capability
- Highest reliability against peak currents
Applikationer
Power Management, Microwave, Alternative Energy
Advarsler
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Tekniske specifikationer
30A
254W
TO-247
175°C
-
No SVHC (21-Jan-2025)
1.7V
1.2kV
3Pins
Through Hole
-
Tekniske dokumenter (3)
Alternativer til IHW15N120R3FKSA1
1 produkt fundet
Tilknyttede produkter
4 produkter blev fundet
Lovgivning og miljø
Det land, hvor den sidste væsentlige fremstillingsproces fandt stedOprindelsesland:Philippines
Det land, hvor den sidste væsentlige fremstillingsproces fandt sted
RoHS
RoHS
Certifikater om produktoverholdelse