IDDD06G65C6XTMA1
Silicon Carbide Schottky Diode, CoolSiC 6G 650V, Single, 650 V, 18 A, 9.6 nC, HDSOP
Brug for flere?
| Antal | |
|---|---|
| 1+ | kr 18,820 |
| 10+ | kr 15,690 |
| 100+ | kr 12,500 |
Produktoplysninger
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Produktoversigt
The CoolSiC™ generation G6 is the leading edge technology from Infineon for the SiC Schottky barrier diodes. The G6 is an advancement of Infineon's G5 technology with the introduction of a novel Schottky metal system. The CoolSiC™ Schottky diode G6 has been designed to complement our 600V and 650V CoolMOS™ 7 families, meeting the most stringent application requirements in this voltage range. Offering key benefits such as System cost and size savings due to the reduced cooling requirements as well as enabling higher frequency and increased power density.
Advarsler
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Tekniske specifikationer
CoolSiC 6G 650V
650V
9.6nC
10 Pin
Surface Mount
No SVHC (27-Jun-2018)
Single
18A
HDSOP
175°C
-
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Det land, hvor den sidste væsentlige fremstillingsproces fandt stedOprindelsesland:Malaysia
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RoHS
RoHS
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