CY15B064Q-SXE

CY15B064Q-SXE is a 64Kbit automotive F-RAM non-volatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is non-volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 121 years while eliminating the complexities, overhead, and system level reliability problems caused by serial flash, EEPROM, and other non-volatile memories. Unlike serial flash and EEPROM, the CY15B064Q performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other non-volatile memories. The CY15B064Q is capable of supporting 101³ read/write cycles, or 10 million times more write cycles than EEPROM.

• 64Kbit ferroelectric random access memory (F-RAM) logically organized as 8K × 8
• Very fast serial peripheral interface (SPI), up to 16MHz frequency
• Direct hardware replacement for serial flash and EEPROM
• Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
• Sophisticated write protection scheme (hardware protection using active low Write Protect (/WP) pin)
• Software block protection for 1/4, 1/2, or entire array
• Low power consumption: 300µA active current at 1MHz and 6µA (typ) standby current at +85°C
• Low operation voltage VDD range from 3V to 3.6V
• AEC Q100 grade 1 compliant
• 8-pin SOIC package and automotive temperature range from -40°C to +125°C