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BSC150N03LDGATMA1
Power MOSFET, N Channel, 30 V, 20 A, 0.0125 ohm, PG-TDSON, Surface Mount
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ProducentINFINEON
Producentens varenummerBSC150N03LDGATMA1
Varenummer1775471
Også kendt somBSC150N03LD G, SP000359362
Teknisk datablad
3.806 På Lager
Brug for flere?
Dag-til-dag levering
Bestil før kl. 17:00 for standardforsendelse
| Antal | |
|---|---|
| 1+ | kr 3,980 |
| 10+ | kr 2,990 |
| 100+ | kr 2,460 |
| 500+ | kr 2,210 |
| 1000+ | kr 2,070 |
| 5000+ | kr 1,980 |
Pris for:Each
Minimum: 1
Flere: 1
kr 3,98 (ekskl. Moms)
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Produktoplysninger
ProducentINFINEON
Producentens varenummerBSC150N03LDGATMA1
Varenummer1775471
Også kendt somBSC150N03LD G, SP000359362
Teknisk datablad
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id20A
Drain Source On State Resistance0.0125ohm
Transistor Case StylePG-TDSON
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1V
Power Dissipation26W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Produktoversigt
The BSC150N03LD G is an OptiMOS™ N-channel Power MOSFET sets new standards in power density and energy efficiency. It is tailored to the needs of power management by improved EMI behaviour, as well as increased battery life. It is available in half-bridge configuration.
- Easy to design in
- Increased battery lifetime
- Improved EMI behaviour making external snubber networks obsolete
- Saving space
- Reducing power losses
- Dual N-channel, logic level
- Fast switching MOSFETs for SMPS
- Optimized technology for DC-to-DC converters
- Qualified according to JEDEC for target applications
- Excellent gate charge x RDS (ON) product (FOM)
- Very low ON-resistance RDS (ON)
- Superior thermal resistance
- 100% Avalanche tested
- Halogen-free, Green device
Applikationer
Power Management, Motor Drive & Control, LED Lighting, Computers & Computer Peripherals, Portable Devices, Consumer Electronics
Advarsler
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Tekniske specifikationer
Channel Type
N Channel
Continuous Drain Current Id
20A
Transistor Case Style
PG-TDSON
Rds(on) Test Voltage
10V
Power Dissipation
26W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.0125ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Tekniske dokumenter (3)
Lovgivning og miljø
Oprindelsesland:
Det land, hvor den sidste væsentlige fremstillingsproces fandt stedOprindelsesland:Malaysia
Det land, hvor den sidste væsentlige fremstillingsproces fandt sted
Det land, hvor den sidste væsentlige fremstillingsproces fandt stedOprindelsesland:Malaysia
Det land, hvor den sidste væsentlige fremstillingsproces fandt sted
Tarifnr.:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS-kompatibel:Ja
RoHS
Kompatible med RoHS-phthalater:Ja
RoHS
SVHC:No SVHC (21-Jan-2025)
Download certifikat om produktoverholdelse
Certifikater om produktoverholdelse
Vægt (kg):.000154
Produktsporbarhed