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SI2399DS-T1-GE3
Power MOSFET, P Channel, 20 V, 6 A, 0.034 ohm, TO-236, Surface Mount
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Available to Order
Manufacturer Standard Lead Time: 22 week(s)
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| Quantity | Price (ex VAT) |
|---|---|
| 3000+ | kr 1.050 |
| 9000+ | kr 1.030 |
Price for:Each (Supplied on Full Reel)
Minimum: 3000
Multiple: 3000
kr 3,150.00 (ex VAT)
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2399DS-T1-GE3
Order Code4384450
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id6A
Drain Source On State Resistance0.034ohm
Transistor Case StyleTO-236
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max600mV
Power Dissipation2.5W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
6A
Transistor Case Style
TO-236
Rds(on) Test Voltage
10V
Power Dissipation
2.5W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.034ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
600mV
No. of Pins
3Pins
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000008
Product traceability