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GT25Q102
IGBT, 25 A, 2.7 V, 200 W, 1.2 kV, TO-3P, 3 Pins
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerTOSHIBA
Manufacturer Part NoGT25Q102
Order Code1300802
Technical Datasheet
Continuous Collector Current25A
Collector Emitter Saturation Voltage2.7V
Power Dissipation200W
Collector Emitter Voltage Max1.2kV
Transistor Case StyleTO-3P
No. of Pins3Pins
Operating Temperature Max150°C
Transistor MountingThrough Hole
Product Range-
Technical Specifications
Continuous Collector Current
25A
Power Dissipation
200W
Transistor Case Style
TO-3P
Operating Temperature Max
150°C
Product Range
-
Collector Emitter Saturation Voltage
2.7V
Collector Emitter Voltage Max
1.2kV
No. of Pins
3Pins
Transistor Mounting
Through Hole
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Japan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Japan
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00975