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NTLUD3A260PZTBG
Dual MOSFET, P Channel, 20 V, 1.7 A
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerONSEMI
Manufacturer Part NoNTLUD3A260PZTBG
Order Code3616916
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds N Channel-
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id N Channel-
Continuous Drain Current Id P Channel1.7A
Drain Source On State Resistance N Channel-
Drain Source On State Resistance P Channel200mohm
Transistor Case StyleUDFN
No. of Pins6Pins
Power Dissipation N Channel-
Power Dissipation P Channel800mW
Operating Temperature Max150°C
Product Range-
Qualification-
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id P Channel
1.7A
Drain Source On State Resistance P Channel
200mohm
No. of Pins
6Pins
Power Dissipation P Channel
800mW
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
-
Continuous Drain Current Id N Channel
-
Drain Source On State Resistance N Channel
-
Transistor Case Style
UDFN
Power Dissipation N Channel
-
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (15-Jan-2018)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.1
Product traceability