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1+ | kr 33.490 |
10+ | kr 21.030 |
100+ | kr 17.600 |
500+ | kr 15.220 |
1000+ | kr 14.920 |
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Product Information
ManufacturerONSEMI
Manufacturer Part No2N3055G
Order Code2101370
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max60V
Continuous Collector Current15A
Power Dissipation115W
Transistor Case StyleTO-204AA
Transistor MountingThrough Hole
No. of Pins2Pins
Transition Frequency2.5MHz
DC Current Gain hFE Min20hFE
Operating Temperature Max200°C
Product Range-
Qualification-
MSL-
SVHCLead (27-Jun-2024)
Product Overview
The 2N3055G is a 60V Silicon NPN Bipolar Complementary Power Transistor designed for general purpose switching and amplifier applications.
- Excellent safe operating area
- DC Current gain(hFE = 20 to 70 at Ic = 4ADC)
- Collector-emitter saturation voltage(Vce (sat) = 1.1VDC maximum at Ic = 4ADC)
Applications
Industrial
Technical Specifications
Transistor Polarity
NPN
Continuous Collector Current
15A
Transistor Case Style
TO-204AA
No. of Pins
2Pins
DC Current Gain hFE Min
20hFE
Product Range
-
MSL
-
Collector Emitter Voltage Max
60V
Power Dissipation
115W
Transistor Mounting
Through Hole
Transition Frequency
2.5MHz
Operating Temperature Max
200°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Technical Docs (2)
Alternatives for 2N3055G
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.012021
Product traceability