Notify me when back in stock
| Quantity | Price (ex VAT) | 
|---|---|
| 1+ | kr 34.650 | 
| 10+ | kr 32.270 | 
| 25+ | kr 31.300 | 
| 50+ | kr 30.550 | 
| 100+ | kr 29.810 | 
| 250+ | kr 28.910 | 
| 500+ | kr 28.170 | 
Product Information
Product Overview
MT47H32M16NF-25E IT:H is a DDR2 SDRAM. It uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is essentially for 4n-prefetch architecture, with an interface designed to transfer two data words per clock cycle at the I/O balls. A single READ or WRITE operation for the DDR2 SDRAM consists of a single 4n-bitwide, two-clock-cycle data transfer at the internal DRAM core and four corresponding n-bit-wide, one-half-clock-cycle data transfers at the I/O balls. It has JEDEC-standard 1.8V I/O (SSTL_18-compatible) with differential data strobe (DQS, DQS#) option.
- Operating voltage range is 1.8V (VDD)
 - 32Meg x 16 configuration, adjustable data-output drive strength
 - Packaging style is 84-ball 8mm x 12.5mm FBGA
 - Timing (cycle time) is 2.5ns at CL = 5 (DDR2-800)
 - 4n-bit prefetch architecture
 - Data rate is 800MT/s
 - DLL to align DQ and DQS transitions with CK, programmable CAS latency (CL)
 - Posted CAS additive latency (AL), WRITE latency = READ latency - 1ᵗCK
 - Adjustable data-output drive strength, 64ms, 8192-cycle refresh
 - On-die termination (ODT), supports JEDEC clock jitter specification
 
Technical Specifications
DDR2
32M x 16bit
TFBGA
1.8V
-40°C
-
No SVHC (17-Dec-2015)
512Mbit
400MHz
84Pins
Surface Mount
95°C
MSL 3 - 168 hours
Technical Docs (1)
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate