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IXGR32N170AH1
IGBT, 26 A, 5.2 V, 200 W, 1.7 kV, ISOPLUS-247, 3 Pins
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No Longer Manufactured
Product Information
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXGR32N170AH1
Order Code1300111
Technical Datasheet
Continuous Collector Current26A
Collector Emitter Saturation Voltage5.2V
Power Dissipation200W
Collector Emitter Voltage Max1.7kV
Transistor Case StyleISOPLUS-247
No. of Pins3Pins
Operating Temperature Max150°C
Transistor MountingThrough Hole
Product Range-
Technical Specifications
Continuous Collector Current
26A
Power Dissipation
200W
Transistor Case Style
ISOPLUS-247
Operating Temperature Max
150°C
Product Range
-
Collector Emitter Saturation Voltage
5.2V
Collector Emitter Voltage Max
1.7kV
No. of Pins
3Pins
Transistor Mounting
Through Hole
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.005