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S29GL256S90FHI020
Flash Memory, Parallel NOR, 256 Mbit, 32M x 8bit, Parallel, 90ns, FBGA-64
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ManufacturerINFINEON
Manufacturer Part NoS29GL256S90FHI020
Order Code4128148
Product Range3V Parallel NOR Flash Memories
Also Known AsSP005664649, S29GL256S90FHI020
Technical Datasheet
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| Quantity | Price (ex VAT) |
|---|---|
| 1+ | kr 54.700 |
| 10+ | kr 50.900 |
| 25+ | kr 49.330 |
| 50+ | kr 48.220 |
| 100+ | kr 43.070 |
| 250+ | kr 37.860 |
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Multiple: 1
kr 54.70 (ex VAT)
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Product Information
ManufacturerINFINEON
Manufacturer Part NoS29GL256S90FHI020
Order Code4128148
Product Range3V Parallel NOR Flash Memories
Also Known AsSP005664649, S29GL256S90FHI020
Technical Datasheet
Flash Memory TypeParallel NOR
Memory Density256Mbit
Memory Size256Mbit
Flash Memory Configuration32M x 8bit
Memory Configuration32M x 8bit
InterfacesParallel
IC Interface TypeParallel
IC Case / PackageFBGA
Memory Case StyleFBGA
No. of Pins64Pins
Clock Frequency Max-
Clock Frequency-
Access Time90ns
Supply Voltage Min2.7V
Supply Voltage Max3.6V
Supply Voltage Nom-
IC MountingSurface Mount
Operating Temperature Min-40°C
Operating Temperature Max85°C
Product Range3V Parallel NOR Flash Memories
SVHCNo SVHC (21-Jan-2025)
Product Overview
S29GL256S90FHI020 is a S29GL256S MIRRORBIT™ page-mode flash memory IC is fabricated on 65nm process technology. This device offers a fast page access time as fast as 15ns with a corresponding random access time as fast as 90ns. This features a write buffer that allows a maximum of 256 words/512bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This device is ideal for today’s embedded applications that require higher density, better performance and lower power consumption.
- CMOS 3.0V core with versatile I/O, single supply (VCC) for read/program/erase (2.7V to 3.6V)
- Versatile I/O feature, wide I/O voltage range (VIO): 1.65V to VCC
- ×16 data bus, asynchronous 32-byte page read, 512-byte programming buffer
- Automatic error checking and correction (ECC)-internal hardware ECC with single bit error correction
- Sector erase-uniform 128kbyte sectors, advanced sector protection (ASP), 20 years data retention
- Status register, data polling, and ready/busy pin methods to determine device status
- Suspend and resume commands for program and erase operations, 100000 program/erase cycles
- Separate 1024-byte one time program (OTP) array with two lockable regions
- 90ns random access time, fortified ball-grid array package (LAA064)
- VIO=VCC=2.7V to 3.6V, lowest address sector protected, industrial (–40 to 85°C) temperature range
Technical Specifications
Flash Memory Type
Parallel NOR
Memory Size
256Mbit
Memory Configuration
32M x 8bit
IC Interface Type
Parallel
Memory Case Style
FBGA
Clock Frequency Max
-
Access Time
90ns
Supply Voltage Max
3.6V
IC Mounting
Surface Mount
Operating Temperature Max
85°C
SVHC
No SVHC (21-Jan-2025)
Memory Density
256Mbit
Flash Memory Configuration
32M x 8bit
Interfaces
Parallel
IC Case / Package
FBGA
No. of Pins
64Pins
Clock Frequency
-
Supply Voltage Min
2.7V
Supply Voltage Nom
-
Operating Temperature Min
-40°C
Product Range
3V Parallel NOR Flash Memories
Technical Docs (1)
Legislation and Environmental
Tariff No:85423275
US ECCN:3A991.b.1.a
EU ECCN:NLR
RoHS Compliant:To be advised
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability