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IRF1018ESTRLPBF
Power MOSFET, N Channel, 60 V, 79 A, 0.0084 ohm, TO-263 (D2PAK), Surface Mount
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| Quantity | Price (ex VAT) |
|---|---|
| 100+ | kr 5.810 |
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRF1018ESTRLPBF
Order Code2803405RL
Product RangeHEXFET
Also Known AsIRF1018ESTRLPBF, SP001564496
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id79A
Drain Source On State Resistance0.0084ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation110W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeHEXFET
Qualification-
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Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
79A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
110W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.0084ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
HEXFET
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002139