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FF400R12KE3HOSA1
IGBT Module, Dual [Half Bridge], 580 A, 1.7 V, 2 kW, 125 °C, Module
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| Quantity | Price (ex VAT) |
|---|---|
| 1+ | kr 1,131.000 |
| 5+ | kr 1,075.000 |
| 10+ | kr 1,018.000 |
Price for:Each
Minimum: 1
Multiple: 1
kr 1,131.00 (ex VAT)
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Product Information
ManufacturerINFINEON
Manufacturer Part NoFF400R12KE3HOSA1
Order Code2726138
Product Range62mm C
Also Known AsFF400R12KE3, SP000100781
Technical Datasheet
IGBT ConfigurationDual [Half Bridge]
Transistor PolarityN Channel
DC Collector Current580A
Continuous Collector Current580A
Collector Emitter Saturation Voltage1.7V
Collector Emitter Saturation Voltage Vce(on)1.7V
Power Dissipation Pd2kW
Power Dissipation2kW
Operating Temperature Max125°C
Junction Temperature Tj Max125°C
Collector Emitter Voltage V(br)ceo1.2kV
Transistor Case StyleModule
IGBT TerminationTab
Collector Emitter Voltage Max1.2kV
IGBT TechnologyIGBT 3 [Trench/Field Stop]
Transistor MountingPanel
Product Range62mm C
SVHCNo SVHC (21-Jan-2025)
Product Overview
FF400R12KE3HOSA1 is a 62mm 1200V, 400A dual IGBT module with TRENCHSTOP™ IGBT3 and emitter controlled high-efficiency diode.
- Superior solution for frequency controlled inverter drives
- UL/CSA certification with UL1557 E83336
- Operating temperature up to 125°C (max 150°C)
- Optimized switching characteristic like softness and reduced switching losses
- Existing packages with higher current capability
- Flexibility and highest reliability
- Optimal electrical performance
- 1200V collector-emitter voltage at Tvj = 25°C
- 580A continuous DC collector current at TC = 25°C, Tvj max = 150°C
- 2000W total power dissipation at TC = 25°C, Tvj max = 150
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
IGBT Configuration
Dual [Half Bridge]
DC Collector Current
580A
Collector Emitter Saturation Voltage
1.7V
Power Dissipation Pd
2kW
Operating Temperature Max
125°C
Collector Emitter Voltage V(br)ceo
1.2kV
IGBT Termination
Tab
IGBT Technology
IGBT 3 [Trench/Field Stop]
Product Range
62mm C
Transistor Polarity
N Channel
Continuous Collector Current
580A
Collector Emitter Saturation Voltage Vce(on)
1.7V
Power Dissipation
2kW
Junction Temperature Tj Max
125°C
Transistor Case Style
Module
Collector Emitter Voltage Max
1.2kV
Transistor Mounting
Panel
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
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Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000337
Product traceability