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DMP4015SSS-13
Power MOSFET, P Channel, 40 V, 9.1 A, 0.011 ohm, SOIC, Surface Mount
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| Quantity | Price (ex VAT) |
|---|---|
| 100+ | kr 3.660 |
| 500+ | kr 2.850 |
| 1000+ | kr 2.580 |
Price for:Each (Supplied on Cut Tape)
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kr 401.00 (ex VAT)
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Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMP4015SSS-13
Order Code3127366RL
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id9.1A
On Resistance Rds(on)0.007ohm
Drain Source On State Resistance0.011ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation1.45W
Power Dissipation Pd1.45W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (27-Jun-2024)
Product Overview
DMP4015SSS-13 is a P-channel enhancement mode MOSFET. This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Typical applications include power management functions, DC-DC converters and analogue switches.
- 100% unclamped inductive switch (UIS) test in production
- Low input capacitance
- Drain-source voltage is -40V at TA = +25°C
- Gate-source voltage is ±25V at TA = +25°C
- Continuous drain current is -9.1A at TC = +25°C, steady state, VGS = -10V
- Pulsed drain current (10µs pulse, duty cycle = 1%) is -100A at TA = +25°C
- Total power dissipation is 1.45W at TA = +25°C
- Static drain-source on-resistance is 11mohm max at VGS = -10V, ID = -9.8A, TA = +25°C
- SO-8 package
- Operating and storage temperature range from -55 to +150°C
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
40V
On Resistance Rds(on)
0.007ohm
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation
1.45W
No. of Pins
8Pins
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (27-Jun-2024)
Transistor Polarity
P Channel
Continuous Drain Current Id
9.1A
Drain Source On State Resistance
0.011ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
Power Dissipation Pd
1.45W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (1)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00185
Product traceability