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Quantity | Price (ex VAT) |
---|---|
1+ | kr 1,429.000 |
10+ | kr 1,266.000 |
25+ | kr 1,212.000 |
100+ | kr 1,175.000 |
Product Information
Product Overview
HMC462LP5E is a GaAs MMIC pHEMT low noise distributed amplifier which operate between 2GHz and 20GHz. Gain flatness is excellent from 6GHz - 18GHz making the device ideal for EW, ECM RADAR and test equipment applications. The wideband amplifier I/Os are internally matched to 50 ohms and are internally DC blocked. It is widely used in application such as telecom infrastructure, microwave radio & VSAT, military EW, ECM & C3I, test instrumentation, fibre optics etc.
- Gain is 13dB typical at (6GHz to 14GHz, TA = +25°C, Vdd= 5V)
- Gain flatness is ±0.5dB typical at (6GHz to 14GHz, TA = +25°C, Vdd= 5V)
- Noise figure is 2.5dB typical at (6GHz to 14GHz, TA = +25°C, Vdd= 5V)
- Output power for 1dB compression is 14dBm typical at (6GHz to 14GHz, TA = +25°C, Vdd= 5V)
- Saturated output power is 16dBm typical at (6GHz to 14GHz, TA = +25°C, Vdd= 5V)
- Supply current is 66mA typical at (6GHz to 14GHz, TA = +25°C, Vdd= 5V)
- Input return loss is 13dB typical at (6GHz to 14GHz, TA = +25°C, Vdd= 5V)
- Output return loss is 12dB typical at (6GHz to 14GHz, TA = +25°C, Vdd= 5V)
- Operating temperature is -40°C to +85°C
- Package style is 32-lead QFN-EP
Notes
ADI products are only authorized (and sold) for use by the customer and are not to be resold or otherwise passed on to any third party
Technical Specifications
2GHz
14dB
QFN-EP
4.5V
-40°C
-
MSL 1 - Unlimited
20GHz
4dB
32Pins
8.5V
85°C
-
No SVHC (21-Jan-2025)
Technical Docs (1)
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate