Udskriv side
DMP10H400SE-13
Power MOSFET, P Channel, 100 V, 6 A, 0.25 ohm, SOT-223, Surface Mount
Billedet er vejledende. Se produktspecifikationen.
4.526 På Lager
Brug for flere?
EKSPRESLEVERING næste hverdag
Bestil inden kl. 17:00
GRATIS Standard levering tilgængelig
for ordrer over kr 0,00
Nøjagtige leveringstider vil blive beregnet i forbindelse med betaling
| Antal | |
|---|---|
| 100+ | kr 2,250 |
| 500+ | kr 2,180 |
| 1000+ | kr 1,960 |
Pris for:Each (Supplied on Cut Tape)
Minimum: 100
Flere: 5
kr 260,00 (ekskl. Moms)
Der tilføjes et re-reeling-gebyr på kr 35,00 for dette produkt
Tilføj varenr. / Linjenote
Tilføjet til din ordrebekræftelse, faktura og følgeseddel kun for denne ordre.
Dette antal vil blive tilføjet til ordrebekræftelsen, faktura, følgeseddel, webbekræftelses-e-mail og produktetiket.
Produktoplysninger
ProducentDIODES INC.
Producentens varenummerDMP10H400SE-13
Varenummer3127352RL
Teknisk datablad
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id6A
On Resistance Rds(on)0.203ohm
Drain Source On State Resistance0.25ohm
Transistor Case StyleSOT-223
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.2V
Power Dissipation Pd2W
Power Dissipation2W
No. of Pins4Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (27-Jun-2024)
Produktoversigt
DMP10H400SE-13 is a P-channel enhancement mode MOSFET. This MOSFET is designed to minimize the on-state resistance and maintain superior switching performance, making it ideal for high efficiency power management applications. Typical applications include motor control, DC-DC converters, power management functions, uninterrupted power supply.
- Low gate drive, low input capacitance, fast switching speed
- Drain-source voltage is -100V at TA = +25°C
- Gate-source voltage is ±20V at TA = +25°C
- Continuous drain current is -6A at TC = +25°C, VGS = -10V, steady state
- Pulsed drain current (380µs pulse, duty cycle = 1%) is -10A at TA = +25°C
- Total power dissipation is 2W at TA = +25°C
- Static drain-source on-resistance is 250mohm max at VGS = -10V, ID = -5A, TA = +25°C
- Maximum body diode forward current is -1.9A at TA = +25°C
- SOT223 case
- Operating and storage temperature range from -55 to +150°C
Advarsler
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Tekniske specifikationer
Transistor Polarity
P Channel
Drain Source Voltage Vds
100V
On Resistance Rds(on)
0.203ohm
Transistor Case Style
SOT-223
Rds(on) Test Voltage
10V
Power Dissipation Pd
2W
No. of Pins
4Pins
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (27-Jun-2024)
Channel Type
P Channel
Continuous Drain Current Id
6A
Drain Source On State Resistance
0.25ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.2V
Power Dissipation
2W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Tekniske dokumenter (2)
Lovgivning og miljø
Oprindelsesland:
Det land, hvor den sidste væsentlige fremstillingsproces fandt stedOprindelsesland:China
Det land, hvor den sidste væsentlige fremstillingsproces fandt sted
Det land, hvor den sidste væsentlige fremstillingsproces fandt stedOprindelsesland:China
Det land, hvor den sidste væsentlige fremstillingsproces fandt sted
Tarifnr.:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS-kompatibel:Ja
RoHS
Kompatible med RoHS-phthalater:Ja
RoHS
SVHC:No SVHC (27-Jun-2024)
Download certifikat om produktoverholdelse
Certifikater om produktoverholdelse
Vægt (kg):.00185
Produktsporbarhed