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VISHAY  SIHF15N60E-E3  Power MOSFET, N Channel, 15 A, 600 V, 0.23 ohm, 10 V, 2 V

VISHAY SIHF15N60E-E3
Technical Data Sheet (161.57KB) EN Se alle tekniske dokumenter

Billedet er vejledende. Se produktspecifikationen.

Produktoversigt

The SIHF15N60E-E3 is a 650V N-channel enhancement-mode Power MOSFET with single configuration. It is suitable for SMPS, server, telecom and PFC power supplies, solar, motor drives, induction heating, renewable energy and welding applications.
  • Low figure-of-merit(FOM) RON x Qg
  • Low input capacitance (CISS)
  • Reduced switching and conduction losses
  • Ultra low gate charge
  • Avalanche energy rated

Produktoplysninger

Transistor Polarity:
N Channel
Continuous Drain Current Id:
15A
Drain Source Voltage Vds:
600V
On Resistance Rds(on):
0.23ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
2V
Power Dissipation Pd:
34W
Transistor Case Style:
TO-220FP
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
E Series
MSL:
MSL 1 - Unlimited
SVHC:
To Be Advised

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Applikationer

  • Industrial;
  • Power Management;
  • Communications & Networking;
  • Lighting;
  • Portable Devices;
  • Computers & Computer Peripherals;
  • Alternative Energy;
  • Motor Drive & Control

Lovgivning og miljø

Fugtighedstolerance:
MSL 1 - Unlimited
Oprindelsesland:
China

Det land, hvor den sidste væsentlige fremstillingsproces fandt sted

RoHS-kompatibel:
Ja
Tarifnr.:
85412900
Vægt (kg):
.002

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