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NXP  BUK98180-100A  MOSFET Transistor, N Channel, 4.6 A, 100 V, 173 mohm, 10 V, 1.5 V

NXP BUK98180-100A
Technical Data Sheet (227.77KB) EN Se alle tekniske dokumenter

Billedet er vejledende. Se produktspecifikationen.

Produktoversigt

The BUK98180-100A is a N-channel enhancement mode Field-Effect Transistor (FET) in surface mount plastic package using Trench MOSFET technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
  • Logic-level compatible
  • Low conduction losses due to low on-state resistance
  • AEC-Q101 Qualified

Produktoplysninger

Transistor Polarity:
N Channel
Continuous Drain Current Id:
4.6A
Drain Source Voltage Vds:
100V
On Resistance Rds(on):
0.173ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
1.5V
Power Dissipation Pd:
8W
Transistor Case Style:
SOT-223
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-
SVHC:
No SVHC (17-Dec-2015)

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Applikationer

  • Automotive;
  • Industrial

Lovgivning og miljø

Fugtighedstolerance:
-
Oprindelsesland:
Philippines

Det land, hvor den sidste væsentlige fremstillingsproces fandt sted

RoHS-kompatibel:
Ja
Tarifnr.:
85412900
Vægt (kg):
.000223