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NXP  BUK98150-55A  MOSFET Transistor, N Channel, 5.5 A, 55 V, 137 mohm, 10 V, 1.5 V

NXP BUK98150-55A
Technical Data Sheet (298.55KB) EN Se alle tekniske dokumenter

Billedet er vejledende. Se produktspecifikationen.

Produktoversigt

The BUK98150-55A is a N-channel enhancement mode Field-Effect Transistor (FET) in a Surface Mounted Device (SMD) plastic package using Trench MOSFET technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
  • Low Conduction Losses Due to Low On-state Resistance
  • AEC-Q101 Qualified

Produktoplysninger

Transistor Polarity:
N Channel
Continuous Drain Current Id:
5.5A
Drain Source Voltage Vds:
55V
On Resistance Rds(on):
0.137ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
1.5V
Power Dissipation Pd:
8W
Transistor Case Style:
SOT-223
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
-
SVHC:
No SVHC (17-Dec-2015)

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Applikationer

  • Audio;
  • Power Management;
  • Automotive

Lovgivning og miljø

Fugtighedstolerance:
-
Oprindelsesland:
Philippines

Det land, hvor den sidste væsentlige fremstillingsproces fandt sted

RoHS-kompatibel:
Ja
Tarifnr.:
85412900
Vægt (kg):
.000227