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INFINEON  IRFHM830TRPBF  MOSFET Transistor, N Channel, 40 A, 30 V, 3 mohm, 10 V, 1.8 V

INFINEON IRFHM830TRPBF
Technical Data Sheet (244.80KB) EN Se alle tekniske dokumenter

Billedet er vejledende. Se produktspecifikationen.

Produktoversigt

The IRFHM830TRPBF is a HEXFET® single N-channel Power MOSFET offers industry standard pin-out for multi-vendor compatibility. It is suitable for battery protection, point of load ControlFET, high side and low side load switch. It is compatible with existing surface-mount techniques.
  • Low RDS (ON) (<3.8mR) results in low conduction losses
  • Low thermal resistance to PCB (<3.4°C/W) enables better thermal dissipation
  • 100% Rg tested for increased reliability
  • Halogen-free
  • Industrial qualification MSL-1 (increased reliability)

Produktoplysninger

Transistor Polarity:
N Channel
Continuous Drain Current Id:
40A
Drain Source Voltage Vds:
30V
On Resistance Rds(on):
0.003ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
1.8V
Power Dissipation Pd:
2.7W
Transistor Case Style:
QFN
No. of Pins:
8Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualification Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (17-Dec-2015)

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Applikationer

  • Motor Drive & Control;
  • Power Management

Lovgivning og miljø

Fugtighedstolerance:
MSL 1 - Unlimited
Oprindelsesland:
Malaysia

Det land, hvor den sidste væsentlige fremstillingsproces fandt sted

RoHS-kompatibel:
Ja
Tarifnr.:
85412900
Vægt (kg):
.000066